Samsung Plans TSMC 3nm Dies for Nvidia HBM

Samsung will use TSMC’s 3-nanometer process to make the base die for Nvidia’s custom NVHBM memory, a shift from its usual practice of producing both the memory and logic components in-house. Nvidia has asked Samsung, SK hynix and Micron to use the same base-die process and standardize their core dies on a shared DRAM manufacturing node, aiming for consistent performance and simpler product validation. The base die will house functions moved off Nvidia’s GPU, a design intended to free space for more computing circuits and improve memory bandwidth while reducing power use. TSMC’s advanced process and manufacturing capacity are expected to help meet the technical and supply demands of the custom memory. Samsung is also assessing whether it could make the base dies itself if NVHBM demand exceeds TSMC’s capacity.